description the ams diode arrays feature high breakdown, high speed diodes in a variety of configurations. each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes. individual diodes within the array have 40v minimum breakdown voltage, can handle 500ma of current and typically switch in less than 10 nanoseconds. diode arr a y circuits features 40v minimum breakdown voltage 500ma current capability per diode fast switching speeds: typically less than 10ns low leakage current mil-s-1950 - 1n5770 - 1n6507 - 1n5772 - 1n6508 - 1n5774 - 1n6509 l 893-25701 circuit diagrams a me r ican microsemiconductor 133 kings rd, madison, nj 07940 ph : 973-377-9566 f ax : 973-377-3078 http://ww w .ame r icanmicrosemi.com/ in f o@ame r icanmicrosemi.com
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